Enhancement Mode Gallium Nitride MOSFET Delivers Impressive Performance | Discrete Power Semis conte
TYPICAL VALUES FOR EPC GaN MOSFETS PARAMETER (UNITS) COMMON TEST CONDITION TYPICAL VALUE/TEST CONDITIONS EPC1015 EPC1001 EPC1010 BVDSS Drain-Source Voltage (V) VGS = 0 40 V ID = 500 µA 100 V ID = 300 µA 200 V ID = 75 ......