IEEE Xplore Abstract - Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiS
Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a criti...