驗證網址web.stanford.edu安全性

MOS TRANSISTOR REVIEW

EE 616 / Saraswat. 6 Limitations of Scaled MOSFET Effect of Reducing Channel Length: Drain Induced Barrier Lowering (DIBL) In devices with long channel lengths, the gate is completely responsible for depleting the semiconductor (QB). In very short channel...

網址安全性掃描由 google 提供